Silicon Carbide and Related Materials 2005

These proceedings of ICSCRM2005 closely reflected the latest experimental and theoretical advances in the bulk growth of SiC, the epitaxial growth of SiC, physical property characterization, perocessing and devices. Also included are three shorter chapters on porous SiC, SiC nanoparticles and nanowires, III-nitrides and related materials. The ipressive progress reported by these papers will be a stimulating source of ideas for all of those working on these materials.Devaty, Robert P. is the author of 'Silicon Carbide and Related Materials 2005 ', published 2006 under ISBN 9780878494255 and ISBN 0878494251.